PART |
Description |
Maker |
TC58FVB160-12 TC58FVB160-85 |
16M Bit (1M×16Bits ) CMOS NAND EEPROM(16M CMOS与非EEPROM) 1,600位(100万16位)的CMOS闪存EEPROM的(1,600 EEPROM中的CMOS与非
|
Toshiba Corporation Toshiba, Corp.
|
M6MGD137W34DWG |
134,217,728-BIT (8,388,608-WORD BY 16-BIT) CMOS FLASH MEMORY & 33,554,432-BIT (2,097,152-WORD BY 16-BIT) CMOS MOBILE RAM
|
Renesas Electronics Corporation
|
UPD4416004 UPD4416004G5-A17-9JF UPD4416004G5-A15-9 |
16M-BIT CMOS FAST SRAM 4M-WORD BY 4-BIT
|
NEC Corp. NEC[NEC]
|
KM416S1020BT-G10T |
CMOS 16M-Bit SDRAM
|
ETC
|
TH58V128DC |
128 Mbit (16M x 8bit) CMOS NAND E2PROM (16M BYTE SmartMedia鈩?
|
Toshiba Semiconductor
|
TH58V128DC |
128 Mbit (16M x 8bit) CMOS NAND E2PROM (16M BYTE SmartMedia)
|
Toshiba Semiconductor
|
MX25L3205DZNI-12G MX25L6405DZNI-12G MX25L3205DPI-1 |
16M-BIT [x 1 / x 2] CMOS SERIAL FLASH
|
Macronix International
|
MX25L6405DMI-12G MX25L3205DM2I-12G MX25L1605DM2I-1 |
16M-BIT [x 1 / x 2] CMOS SERIAL FLASH
|
Macronix International
|
MBM29F017A-90PNS |
FLASH MEMORY CMOS 16M (2M x 8) BIT
|
SPANSION
|
MX25L1635EM2I10G |
16M-BIT [x 1/x 2/x 4] CMOS SERIAL FLASH
|
Macronix International
|
MX27C1610 |
16M-BIT [2M x 8/1M x 16] CMOS OTP ROM
|
Macronix International
|
TC58V64DC |
16M-Bit CMOS NAND EPROM
|
Toshiba Semiconductor
|